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NE85633-T1B-R25-A Tech Specifications

CEL  NE85633-T1B-R25-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Supplier Device Package SOT-23
Weight 200.998119mg
Collector-Emitter Breakdown Voltage 12V
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 200mW
Frequency 1GHz
Base Part Number NE85633
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Power - Max 200mW
Gain Bandwidth Product 7 GHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 20mA 10V
Gain 11.5dB
Voltage - Collector Emitter Breakdown (Max) 12V
Max Frequency 7GHz
Max Breakdown Voltage 12V
Frequency - Transition 7GHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
Continuous Collector Current 100mA
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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NE85633-T1B-R25-A Documents

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