CEL NE5520279A-T1-A Single MOSFETs Transistors
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NE5520279A-T1-A Tech Specifications
CEL NE5520279A-T1-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | 79A, 4 PIN | |
| Package Style | MICROWAVE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | UNSPECIFIED | |
| Reflow Temperature-Max (s) | 10 | |
| Rohs Code | Yes | |
| Manufacturer Part Number | NE5520279A-T1-A | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NEC Compound Semiconductor Devices Ltd | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEC COMPOUND SEMICONDUCTOR DEVICES LTD | |
| Risk Rank | 5.62 | |
| Drain Current-Max (ID) | 1 A | |
| Terminal Position | QUAD | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-XQMW-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 6 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND |
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