CEL CE3512K2 RF MOSFETs Transistors 12GHz 13.7dB 125mW
CE3512K2
414-368-CE3512K2
4-Micro-X
RoHS Compliant
Frequency: 12GHz,Gain: 13.7dB,Power - Output: 125mW
In Stock Min. : 1
Mult. : 1
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CE3512K2 Tech Specifications
CEL CE3512K2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 7 Weeks | |
| Package / Case | 4-Micro-X | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Voltage Rated | 4V | |
| Packaging | Strip | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Terminal Position | QUAD | |
| Terminal Form | FLAT | |
| Current Rating | 15mA | |
| Frequency | 12GHz | |
| JESD-30 Code | S-PQMW-F4 | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Current - Test | 10mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | pHEMT FET | |
| Gain | 13.7dB | |
| Drain Current-Max (Abs) (ID) | 0.015A | |
| DS Breakdown Voltage-Min | 3V | |
| Power - Output | 125mW | |
| FET Technology | JUNCTION | |
| Noise Figure | 0.5dB | |
| Voltage - Test | 2V | |
| RoHS Status | ROHS3 Compliant |
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