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BD649-S Tech Specifications

Bourns  BD649-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 100V
Collector-Emitter Saturation Voltage 2V
Number of Elements 1 Element
hFEMin 750
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 2W
Base Part Number BD649
Pin Count 3
Polarity NPN
Element Configuration Single
Power Dissipation 62.5W
Case Connection COLLECTOR
Power - Max 2W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A 3V
Current - Collector Cutoff (Max) 500μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2.5V @ 50mA, 5A
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
Height 9.3mm
Length 10.4mm
Width 4.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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BD649-S Documents

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BD649-S brand manufacturers: Bourns Inc., Twicea stock, BD649-S reference price.Bourns Inc.. BD649-S parameters, BD649-S Datasheet PDF and pin diagram description download.You can use the BD649-S Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BD649-S pin diagram and circuit diagram and usage method of function,BD649-S electronics tutorials.You can download from the Twicea.