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BD646-S Tech Specifications

Bourns  BD646-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Collector-Emitter Breakdown Voltage 60V
Collector-Emitter Saturation Voltage 2V
Current-Collector (Ic) (Max) 8A
Number of Elements 1 Element
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 2W
Base Part Number BD646
Polarity PNP
Element Configuration Single
Power - Max 2W
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 50mA, 5A
Voltage - Collector Emitter Breakdown (Max) 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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BD646-S Documents

Download datasheets and manufacturer documentation for   BD646-S

BD646-S brand manufacturers: Bourns Inc., Twicea stock, BD646-S reference price.Bourns Inc.. BD646-S parameters, BD646-S Datasheet PDF and pin diagram description download.You can use the BD646-S Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BD646-S pin diagram and circuit diagram and usage method of function,BD646-S electronics tutorials.You can download from the Twicea.