Bourns Inc. BD245B-S Single BJT Transistors
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BD245B-S Tech Specifications
Bourns BD245B-S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-218-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 80V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tube | |
| Published | 1993 | |
| JESD-609 Code | e1 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| HTS Code | 8541.29.00.95 | |
| Max Power Dissipation | 80W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BD245 | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Case Connection | COLLECTOR | |
| Power - Max | 3W | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 80V | |
| Max Collector Current | 10A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 3A 4V | |
| Current - Collector Cutoff (Max) | 700μA | |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 2.5A, 10A | |
| Emitter Base Voltage (VEBO) | 5V | |
| RoHS Status | ROHS3 Compliant |
BD245B-S Documents
Download datasheets and manufacturer documentation for BD245B-S
- DatasheetsBD245x
- PCN Obsolescence/ EOLSOT-93 Bipolar Transistors 03/Apr/2012
- ConflictMineralStatementBourns-company-36.pdf
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