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OPB755T Tech Specifications
BI Technologies OPB755T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mount | Panel, Through Hole | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 24 V | |
| Number of Elements | 1 Element | |
| RoHS | Non-Compliant | |
| Max Operating Temperature | 80 °C | |
| Min Operating Temperature | -40 °C | |
| Output Type | Phototransistor | |
| Power Dissipation | 100 mW | |
| Forward Current | 40 mA | |
| Forward Voltage | 1.8 V | |
| Collector Emitter Voltage (VCEO) | 24 V | |
| Max Collector Current | 30 mA | |
| Sensing Distance | 5.588 mm | |
| Reverse Breakdown Voltage | 2 V | |
| Reverse Voltage | 2 V | |
| Wavelength | 890 nm |
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