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APTGT35X120T3G Tech Specifications
Atmel APTGT35X120T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | SP3-32 | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 1200 V | |
| Collector-Emitter Saturation Voltage | 1.7 V | |
| Continuous Collector Current at 25 C | 55 A | |
| Gate-Emitter Leakage Current | 400 nA | |
| Pd - Power Dissipation | 208 W | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 100 C | |
| Maximum Gate Emitter Voltage | 20 V | |
| Mounting Styles | Chassis Mount | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Packaging | Tube | |
| Configuration | 3-Phase Inverter | |
| Product | IGBT Silicon Modules |
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