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APT60GA60JD60 Tech Specifications
Atmel APT60GA60JD60 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | SOT-227-4 | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Collector-Emitter Saturation Voltage | 2 V | |
| Continuous Collector Current at 25 C | 112 A | |
| Gate-Emitter Leakage Current | 100 nA | |
| Pd - Power Dissipation | 356 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Maximum Gate Emitter Voltage | 30 V | |
| Mounting Styles | Chassis Mount | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Tradename | POWER MOS 8, ISOTOP | |
| Unit Weight | 1.058219 oz | |
| Packaging | Tube | |
| Configuration | Single | |
| Operating Temperature Range | - 55 C to + 150 C | |
| Product | IGBT Silicon Modules | |
| Height | 9.6 mm | |
| Length | 38.2 mm | |
| Width | 25.4 mm |
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