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APT56M50B2 Tech Specifications

Atmel  APT56M50B2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case T-MAX-3
RoHS Details
Mounting Styles Through Hole
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 56 A
Rds On - Drain-Source Resistance 85 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 220 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 780 W
Channel Mode Enhancement
Tradename Power MOS 8
Fall Time 33 ns
Forward Transconductance - Min 43 S
Factory Pack QuantityFactory Pack Quantity 1
Typical Turn-Off Delay Time 100 ns
Typical Turn-On Delay Time 38 ns
Unit Weight 0.208116 oz
Packaging Tube
Configuration Single
Number of Channels 1 ChannelChannel
Rise Time 45 ns
Height 5.31 mm
Length 21.46 mm
Width 16.26 mm
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