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APT50GN60BDQ3G Tech Specifications
Atmel APT50GN60BDQ3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | TO-247-3 | |
| RoHS | Details | |
| Mounting Styles | Through Hole | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Collector-Emitter Saturation Voltage | 1.45 V | |
| Maximum Gate Emitter Voltage | - 30 V, + 30 V | |
| Continuous Collector Current at 25 C | 107 A | |
| Pd - Power Dissipation | 366 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Gate-Emitter Leakage Current | 600 nA | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Packaging | Tube | |
| Configuration | Single |
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