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APT30M85BVRG Tech Specifications
Atmel APT30M85BVRG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | TO-247-3 | |
| Id - Continuous Drain Current | 40 A | |
| Vds - Drain-Source Breakdown Voltage | 300 V | |
| Transistor Polarity | N-Channel | |
| Mounting Styles | Through Hole | |
| RoHS | Details | |
| Rds On - Drain-Source Resistance | 85 mOhms | |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 4 V | |
| Qg - Gate Charge | 130 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 300 W | |
| Channel Mode | Enhancement | |
| Tradename | Power MOS V | |
| Fall Time | 7 ns | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Typical Turn-Off Delay Time | 43 ns | |
| Typical Turn-On Delay Time | 12 ns | |
| Unit Weight | 0.211644 oz | |
| Packaging | Tube | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Rise Time | 10 ns | |
| Height | 5.31 mm | |
| Length | 21.46 mm | |
| Width | 16.26 mm | 
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