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2N6295 Tech Specifications
Atmel 2N6295 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | TO-66-2 | |
| RoHS | N | |
| Mounting Styles | Through Hole | |
| Transistor Polarity | NPN | |
| Collector- Emitter Voltage VCEO Max | 80 V | |
| Emitter- Base Voltage VEBO | 5 V | |
| Collector-Emitter Saturation Voltage | 3 V | |
| Maximum DC Collector Current | 8 A | |
| Pd - Power Dissipation | 50 W | |
| Gain Bandwidth Product fT | - | |
| Minimum Operating Temperature | - 65 C | |
| Maximum Operating Temperature | + 200 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| DC Current Gain hFE Max | 18000 | |
| DC Collector/Base Gain hfe Min | 750 | |
| Packaging | Tray | |
| Configuration | Single | |
| Collector Base Voltage (VCBO) | 80 V | |
| Continuous Collector Current | 4 A |
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