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QEB363ZR Tech Specifications

AMI Semiconductor  QEB363ZR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92 (TO-226)
Package Bulk
Current-Collector (Ic) (Max) 50mA
Mfr Fairchild Semiconductor
Product Status Obsolete
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Other Names QEB363ZRDKR
Operating Temperature -
Series -
Packaging Original-Reel®
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Type Infrared (IR)
Orientation Top View
Voltage - Forward (Vf) (Typ) 1.6V
Viewing Angle 24°
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V
Gain -
Voltage - Collector Emitter Breakdown (Max) 12V
Wavelength 940nm
Frequency - Transition 2GHz
Current - DC Forward (If) (Max) 50mA
Radiant Intensity (Ie) Min @ If 8mW/sr @ 100mA
Noise Figure (dB Typ @ f) -
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