Advanced Power Technology APT50GF100BN Single IGBTs
APT50GF100BN
42-372-APT50GF100BN
RoHS Compliant
Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247
In Stock Min. : 1
Mult. : 1
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APT50GF100BN Tech Specifications
Advanced APT50GF100BN technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Rise Time-Max (tr) | 130 ns | |
| Turn-off Time-Max (toff) | 115 ns | |
| Turn-off Time-Nom (toff) | 75 ns | |
| Turn-on Time-Max (ton) | 40 ns | |
| Turn-on Time-Nom (ton) | 20 ns | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | FAST SWITCHING | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-247 | |
| Power Dissipation-Max (Abs) | 245 W | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 1000 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| VCEsat-Max | 3.7 V | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Power Dissipation Ambient-Max | 260 W | |
| Fall Time-Max (tf) | 800 ns |
Index :
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