Advanced MS1000 RF BJT Transistors 20 A
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MS1000 Tech Specifications
Advanced MS1000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | Axial | |
| Supplier Device Package | Axial | |
| Emitter- Base Voltage VEBO | 4 V | |
| Pd - Power Dissipation | 270 W | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | + 150 C | |
| DC Collector/Base Gain hfe Min | 10 | |
| Unit Weight | 0.812183 oz | |
| Minimum Operating Temperature | - 65 C | |
| Mounting Styles | Screw Mount | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Brand | Advanced Semiconductor, Inc. | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 36 V | |
| Operating Temperature | -55°C ~ 250°C | |
| Series | Military, MIL-PRF-39007, RWR80S | |
| Packaging | Bulk | |
| Size / Dimension | 0.094 Dia x 0.406 L (2.39mm x 10.31mm) | |
| Tolerance | ±1% | |
| Part Status | Active | |
| Number of Terminations | 2Terminations | |
| Temperature Coefficient | ±20ppm/°C | |
| Type | RF Bipolar Power | |
| Resistance | 249 Ohms | |
| Composition | Wirewound | |
| Power (Watts) | 2W | |
| Subcategory | Transistors | |
| Technology | Si | |
| Operating Frequency | 30 MHz | |
| Failure Rate | M (1%) | |
| Configuration | Single | |
| Product Type | RF Bipolar Transistors | |
| Transistor Type | Bipolar Power | |
| Continuous Collector Current | 20 A | |
| Features | Military, Moisture Resistant | |
| Product Category | RF Bipolar Transistors | |
| Height Seated (Max) | -- |
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