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MRF587 Tech Specifications

Advanced  MRF587 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case Case244-04
Emitter- Base Voltage VEBO 2.5 V
Pd - Power Dissipation 5 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 50
Unit Weight 0.429323 oz
Minimum Operating Temperature - 65 C
Mounting Styles Through Hole
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
RoHS Details
Collector- Emitter Voltage VCEO Max 17 V
Packaging Tray
Type RF Bipolar Power
Subcategory Transistors
Technology Si
Operating Frequency 500 MHz
Product Type RF Bipolar Transistors
Transistor Type Bipolar Power
Continuous Collector Current 200 mA
Product Category RF Bipolar Transistors
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