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HF75-28F Tech Specifications

Advanced  HF75-28F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Emitter- Base Voltage VEBO 4 V
Pd - Power Dissipation 140 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 10 at 1 A, 5 V
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 10
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 30 MHz
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
DC Current Gain hFE Max 100 at 1 A, 5 V
Collector- Emitter Voltage VCEO Max 35 V
Subcategory Transistors
Technology Si
Configuration Single
Product Type BJTs - Bipolar Transistors
Collector Base Voltage (VCBO) 60 V
Continuous Collector Current 10 A
Product Category Bipolar Transistors - BJT
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