SemiQ’s SiC MOSFETs bring high efficiency to high-performance applications including electric vehicles, power supplies and data centers.
SemiQ, Inc. is proud to announce the release of its second-generation Silicon Carbide 1200V 80mΩ Power MOSFET modules developed in the industry-standard SOT-227 packages.
These 1200V Silicon Carbide MOSFET Modules are the latest extension to our SiC MOSFET product portfolio.
SemiQ’s SiC MOSFETs bring high efficiency to high-performance applications including electric vehicles,
power supplies and data centers, and are specifically designed and tested to operate reliably in extreme environments. Compared to legacy Silicon IGBTs, SemiQ’s MOSFETs switch faster with lower losses, enabling system-level benefits through reduced size, weight and cooling requirements.
Michael Robinson, President and General Manager at SemiQ said “The SOT-227 package is one of the
best fully Isolated Power Semiconductors Packages around. Combined with our SiC MOSFETs and SiC
Diodes, these products are perfect for increasing efficiency in your Fast Charging and Inverters systems.”
40mΩ and 20mΩ modules in the SOT-227 are on the way.
The original press release can be found here.
