| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Output Enable | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Reverse Pinout | Self Refresh | Length | Width |
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![]() | Mfr. Part #AS7C251MPFS18A-166TQCTwicea Part #4609-535-AS7C251MPFS18A-166TQC | Integrated Silicon Solution Inc |
Description: Standard SRAM, 1MX18, 3.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 100 | 3.5 ns | - | INTEGRATED SILICON SOLUTION INC | - | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 2.5 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | - | 1 | 0.65 mm | compliant | - | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | COMMERCIAL | 2.375 V | - | SYNCHRONOUS | - | 1MX18 | - | 1.6 mm | 18 | - | 18874368 bit | - | PARALLEL | - | STANDARD SRAM | - | - | - | - | - | - | - | - | 20 mm | 14 mm | ||
| AS7C251MPFS18A-166TQC 4609-535-AS7C251MPFS18A-166TQC Integrated Silicon Solution Inc
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![]() | Mfr. Part #IS45S81600E-7CTLA2Twicea Part #4609-535-IS45S81600E-7CTLA2 | Integrated Silicon Solution Inc |
Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | - | INTEGRATED SILICON SOLUTION INC | - | 16777216 words | 16000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | 3.3 V | e3 | - | EAR99 | MATTE TIN | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | 54 | R-PDSO-G54 | - | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | - | 16MX8 | - | 1.2 mm | 8 | - | 134217728 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | ||
| IS45S81600E-7CTLA2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS42VS32200E-10BLITwicea Part #4609-535-IS42VS32200E-10BLI | Integrated Silicon Solution Inc |
Description: Synchronous DRAM, 2MX32, 8ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, FBGA-90
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 90 | 8 ns | 100 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | LFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.8 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 10 | 90 | R-PBGA-B90 | Not Qualified | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.09 mA | 2MX32 | 3-STATE | 1.45 mm | 32 | 0.001 A | 67108864 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | - | 4096 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 13 mm | 8 mm | ||
| IS42VS32200E-10BLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS43DR86400-25EBLITwicea Part #4609-535-IS43DR86400-25EBLI | Integrated Silicon Solution Inc |
DDR DRAM, 64MX8, CMOS, PBGA60, 10 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-60
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 60 | - | - | INTEGRATED SILICON SOLUTION INC | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | DSBGA | Yes | 1.8 V | e1 | Yes | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 60 | R-PBGA-B60 | Not Qualified | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 64MX8 | - | 1.2 mm | 8 | - | 536870912 bit | - | - | - | DDR2 DRAM | - | - | - | - | - | FOUR BANK PAGE BURST | - | YES | 10.5 mm | 10 mm | ||
| IS43DR86400-25EBLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS61NLP12832B-250B3ITwicea Part #4609-535-IS61NLP12832B-250B3I | Integrated Silicon Solution Inc |
ZBT SRAM, 128KX32, 2.6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 165 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | - | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | Not Qualified | 3.465 V | INDUSTRIAL | 3.135 V | - | SYNCHRONOUS | 0.25 mA | 128KX32 | 3-STATE | 1.2 mm | 32 | 0.035 A | 4194304 bit | - | PARALLEL | COMMON | ZBT SRAM | 3.14 V | - | - | - | - | - | - | - | 15 mm | 13 mm | ||
| IS61NLP12832B-250B3I | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IC61LV6416-12BTwicea Part #4609-535-IC61LV6416-12B | Integrated Silicon Solution Inc |
Standard SRAM, 64KX16, 12ns, CMOS, PBGA48, 6 X 8 MM, TFBGA-48
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 48 | 12 ns | - | INTEGRATED SILICON SOLUTION INC | 3 | 65536 words | 64000 | 70 °C | - | PLASTIC/EPOXY | BGA | 6 X 8 MM, TFBGA-48 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY | Obsolete | - | No | 3.3 V | e0 | - | 3A991.B.2.B | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 0.75 mm | compliant | - | - | R-PBGA-B48 | Not Qualified | 3.63 V | COMMERCIAL | 2.97 V | - | ASYNCHRONOUS | 0.18 mA | 64KX16 | 3-STATE | - | 16 | 0.01 A | 1048576 bit | - | PARALLEL | COMMON | STANDARD SRAM | 3 V | - | - | - | - | - | - | - | - | - | ||
| IC61LV6416-12B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS46LR32200C-6BLA1Twicea Part #4609-535-IS46LR32200C-6BLA1 | Integrated Silicon Solution Inc |
DDR DRAM, 2MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 90 | 5.5 ns | - | INTEGRATED SILICON SOLUTION INC | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | - | 1.8 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | - | R-PBGA-B90 | - | 1.95 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 2MX32 | - | 1.2 mm | 32 | - | 67108864 bit | - | - | - | DDR1 DRAM | - | - | - | - | - | FOUR BANK PAGE BURST | - | YES | 13 mm | 8 mm | ||
| IS46LR32200C-6BLA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS61VPS12836A-200B3ITwicea Part #4609-535-IS61VPS12836A-200B3I | Integrated Silicon Solution Inc |
Cache SRAM, 128KX36, 3.1ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 165 | 3.1 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | - | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | No | 2.5 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | Not Qualified | 2.75 V | INDUSTRIAL | 2.375 V | - | SYNCHRONOUS | 0.21 mA | 128KX36 | 3-STATE | 1.2 mm | 36 | 0.075 A | 4718592 bit | - | PARALLEL | COMMON | CACHE SRAM | 2.38 V | - | - | - | - | - | - | - | 15 mm | 13 mm | ||
| IS61VPS12836A-200B3I | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS61VPS102418A-200B2ITwicea Part #4609-535-IS61VPS102418A-200B2I | Integrated Silicon Solution Inc |
Cache SRAM, 1MX18, 3.1ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 119 | 3.1 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | No | 2.5 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1.27 mm | compliant | - | 119 | R-PBGA-B119 | Not Qualified | 2.625 V | INDUSTRIAL | 2.375 V | - | SYNCHRONOUS | 0.475 mA | 1MX18 | 3-STATE | 3.5 mm | 18 | 0.125 A | 18874368 bit | - | PARALLEL | COMMON | CACHE SRAM | 2.38 V | - | - | - | - | - | - | - | 22 mm | 14 mm | ||
| IS61VPS102418A-200B2I 4609-535-IS61VPS102418A-200B2I Integrated Silicon Solution Inc
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![]() | Mfr. Part #IS43R16160-75TLTwicea Part #4609-535-IS43R16160-75TL | Integrated Silicon Solution Inc |
DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, LEAD FREE, PLASTIC, TSOP2-66
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 66 | 0.75 ns | - | INTEGRATED SILICON SOLUTION INC | - | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE | End Of Life | TSOP2 | Yes | 2.5 V | e3 | - | EAR99 | MATTE TIN | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | 260 | 1 | 0.65 mm | compliant | 10 | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | - | 16MX16 | - | 1.2 mm | 16 | - | 268435456 bit | - | - | - | DDR1 DRAM | - | - | - | - | - | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | ||
| IS43R16160-75TL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS64VLPS204836B-166B3LA3Twicea Part #4609-535-IS64VLPS204836B-166B3LA3 | Integrated Silicon Solution Inc |
Cache SRAM, 2MX36, 3.5ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, LEAD FREE, PLASTIC, TFBGA-165
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 165 | 3.5 ns | 166 MHz | INTEGRATED SILICON SOLUTION INC | - | 2097152 words | 2000000 | 125 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | Yes | 2.5 V | - | - | 3A991.B.2.A | - | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | Not Qualified | 2.625 V | AUTOMOTIVE | 2.375 V | - | SYNCHRONOUS | - | 2MX36 | 3-STATE | 1.2 mm | 36 | - | 75497472 bit | AEC-Q100 | PARALLEL | COMMON | CACHE SRAM | 3.14 V | - | - | - | - | - | - | - | 15 mm | 13 mm | ||
| IS64VLPS204836B-166B3LA3 4609-535-IS64VLPS204836B-166B3LA3 Integrated Silicon Solution Inc
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![]() | Mfr. Part #IS67WVE4M16TBLL-70BLA1Twicea Part #4609-535-IS67WVE4M16TBLL-70BLA1 | Integrated Silicon Solution Inc |
Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 48 | 70 ns | - | INTEGRATED SILICON SOLUTION INC | - | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA48,6X8,30 | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | Yes | - | e1 | - | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | - | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 0.75 mm | compliant | 10 | - | R-PBGA-B48 | - | 3.6 V | INDUSTRIAL | 2.7 V | 1 | ASYNCHRONOUS | 0.025 mA | 4MX16 | 3-STATE | 1.2 mm | 16 | 0.00015 A | 67108864 bit | AEC-Q100 | PARALLEL | COMMON | PSEUDO STATIC RAM | 2.7 V | NO | - | - | - | - | NO | - | 8 mm | 6 mm | ||
| IS67WVE4M16TBLL-70BLA1 4609-535-IS67WVE4M16TBLL-70BLA1 Integrated Silicon Solution Inc
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![]() | Mfr. Part #IS46TR81280B-15GBLA1Twicea Part #4609-535-IS46TR81280B-15GBLA1 | Integrated Silicon Solution Inc |
DDR DRAM, 128MX8, CMOS, PBGA78, BGA-78
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 78 | - | - | INTEGRATED SILICON SOLUTION INC | - | 134217728 words | 128000000 | - | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | Yes | 1.5 V | e1 | - | EAR99 | TIN SILVER COPPER | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | - | R-PBGA-B78 | - | 1.575 V | - | 1.425 V | 1 | SYNCHRONOUS | - | 128MX8 | - | 1.2 mm | 8 | - | 1073741824 bit | - | - | - | DDR3 DRAM | - | - | - | - | - | MULTI BANK PAGE BURST | - | YES | 10.5 mm | 8 mm | ||
| IS46TR81280B-15GBLA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS46R16800E-6TLA2Twicea Part #4609-535-IS46R16800E-6TLA2 | Integrated Silicon Solution Inc |
DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66
Datasheet
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| Min.:1 Mult.:1 | YES | 66 | 0.7 ns | 167 MHz | INTEGRATED SILICON SOLUTION INC | - | 8388608 words | 8000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Active | - | Yes | 2.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.65 mm | compliant | - | - | R-PDSO-G66 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.22 mA | 8MX16 | 3-STATE | 1.2 mm | 16 | 0.003 A | 134217728 bit | AEC-Q100 | - | COMMON | DDR1 DRAM | - | - | 4096 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | ||
| IS46R16800E-6TLA2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS61NVP25636A-250TQTwicea Part #4609-535-IS61NVP25636A-250TQ | Integrated Silicon Solution Inc |
Description: 256KX36 ZBT SRAM, 2.6ns, PQFP100, TQFP-100
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 100 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 2.5 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | - | 1 | 0.65 mm | compliant | - | 100 | R-PQFP-G100 | Not Qualified | 2.625 V | COMMERCIAL | 2.375 V | - | SYNCHRONOUS | 0.28 mA | 256KX36 | 3-STATE | 1.6 mm | 36 | 0.045 A | 9437184 bit | - | PARALLEL | COMMON | ZBT SRAM | 2.38 V | - | - | - | - | - | - | - | 20 mm | 14 mm | ||
| IS61NVP25636A-250TQ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS49NLC18320-18BITwicea Part #4609-535-IS49NLC18320-18BI | Integrated Silicon Solution Inc |
DDR DRAM, 32MX18, 1.875ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144
Datasheet
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| Min.:1 Mult.:1 | YES | 144 | 1.875 ns | 533 MHz | INTEGRATED SILICON SOLUTION INC | - | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | 11 X 18.50 MM, FBGA-144 | BGA144,12X18,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | No | 1.8 V | - | - | EAR99 | - | AUTO REFRESH | 8542.32.00.32 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 144 | R-PBGA-B144 | Not Qualified | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 1.335 mA | 32MX18 | 3-STATE | 1.2 mm | 18 | 0.055 A | 603979776 bit | - | - | COMMON | DDR DRAM | - | - | - | 2,4,8 | - | MULTI BANK PAGE BURST | - | - | 18.5 mm | 11 mm | ||
| IS49NLC18320-18BI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS45VS16400L-75BLA2Twicea Part #4609-535-IS45VS16400L-75BLA2 | Integrated Silicon Solution Inc |
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54
Datasheet
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| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | - | INTEGRATED SILICON SOLUTION INC | - | 4194304 words | 4000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | BGA | - | 1.8 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 54 | S-PBGA-B54 | - | 1.95 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 4MX16 | - | 1.2 mm | 16 | - | 67108864 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | FOUR BANK PAGE BURST | - | YES | 8 mm | 8 mm | ||
| IS45VS16400L-75BLA2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS61NLP25636A-250B3Twicea Part #4609-535-IS61NLP25636A-250B3 | Integrated Silicon Solution Inc |
ZBT SRAM, 256KX36, 2.6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 165 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | PIPELINED ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | - | SYNCHRONOUS | 0.28 mA | 256KX36 | 3-STATE | 1.2 mm | 36 | 0.045 A | 9437184 bit | - | PARALLEL | COMMON | ZBT SRAM | 3.14 V | - | - | - | - | - | - | - | 15 mm | 13 mm | ||
| IS61NLP25636A-250B3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS42R16320D-6TLITwicea Part #4609-535-IS42R16320D-6TLI | Integrated Silicon Solution Inc |
Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSSOP2, 54 PIN
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 166 MHz | INTEGRATED SILICON SOLUTION INC | - | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSSOP | Yes | 2.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.28 | DUAL | GULL WING | - | 1 | 0.8 mm | compliant | - | 54 | R-PDSO-G54 | Not Qualified | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.25 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.004 A | 536870912 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | - | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | ||
| IS42R16320D-6TLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS49NLC18160-25WBLTwicea Part #4609-535-IS49NLC18160-25WBL | Integrated Silicon Solution Inc |
DDR DRAM, 16MX18, CMOS, PBGA144, WBGA-144
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 144 | - | 400 MHz | INTEGRATED SILICON SOLUTION INC | - | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TFBGA | TBGA, | BGA144,12X18,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | 1.8 V | - | - | EAR99 | - | - | 8542.32.00.28 | BOTTOM | BALL | - | 1 | 1 mm | unknown | - | - | R-PBGA-B144 | - | 1.9 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.97 mA | 16MX18 | 3-STATE | 1.2 mm | 18 | 0.048 A | 301989888 bit | - | - | COMMON | DDR1 DRAM | - | - | - | 2,4,8 | - | MULTI BANK PAGE BURST | - | YES | 18.5 mm | 11 mm | ||
| IS49NLC18160-25WBL |
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