| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Refresh Cycles | I2C Control Byte | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Length | Width |
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![]() | Mfr. Part #IS64VVPS204836B-166TQ2LA3Twicea Part #4609-535-IS64VVPS204836B-166TQ2LA3 | Integrated Silicon Solution Inc |
Standard SRAM, 2MX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, LQFP-100
Datasheet
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| Min.:1 Mult.:1 | YES | 100 | 3.8 ns | - | INTEGRATED SILICON SOLUTION INC | - | 2097152 words | 2000000 | 125 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | - | Yes | 1.8 V | e3 | - | 3A991.B.2.A | Matte Tin (Sn) | - | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 10 | - | R-PQFP-G100 | - | 1.89 V | AUTOMOTIVE | 1.71 V | - | SYNCHRONOUS | - | 2MX36 | - | 1.6 mm | 36 | - | 75497472 bit | - | PARALLEL | - | STANDARD SRAM | - | - | - | - | - | - | - | - | - | - | - | - | 20 mm | 14 mm | ||
| IS64VVPS204836B-166TQ2LA3 4609-535-IS64VVPS204836B-166TQ2LA3 Integrated Silicon Solution Inc
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![]() | Mfr. Part #IS64VPS204836B-166M3LA3Twicea Part #4609-535-IS64VPS204836B-166M3LA3 | Integrated Silicon Solution Inc |
Standard SRAM, 2MX36, 3.8ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, LFBGA-165
Datasheet
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| Min.:1 Mult.:1 | YES | 165 | 3.8 ns | - | INTEGRATED SILICON SOLUTION INC | 3 | 2097152 words | 2000000 | 125 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, | - | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | - | Yes | 2.5 V | e1 | - | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | - | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 10 | - | R-PBGA-B165 | - | 2.625 V | AUTOMOTIVE | 2.375 V | - | SYNCHRONOUS | - | 2MX36 | - | 1.4 mm | 36 | - | 75497472 bit | - | PARALLEL | - | STANDARD SRAM | - | - | - | - | - | - | - | - | - | - | - | - | 17 mm | 15 mm | ||
| IS64VPS204836B-166M3LA3 4609-535-IS64VPS204836B-166M3LA3 Integrated Silicon Solution Inc
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![]() | Mfr. Part #IS64LPS12832EC-250TQLA3Twicea Part #4609-535-IS64LPS12832EC-250TQLA3 | Integrated Silicon Solution Inc |
Description: Cache SRAM, 128KX32, 2.6ns, CMOS, PQFP100, TQFP-100
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 100 | 2.6 ns | 250 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, QFP100,.63X.87 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Active | QFP | Yes | 3.3 V | e3 | - | 3A991.B.2.A | Matte Tin (Sn) | - | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.65 mm | compliant | 10 | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | AUTOMOTIVE | 3.135 V | - | SYNCHRONOUS | 0.285 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 0.1 A | 4194304 bit | AEC-Q100 | PARALLEL | COMMON | CACHE SRAM | - | - | - | - | - | 3.14 V | - | - | - | - | - | - | 20 mm | 14 mm | ||
| IS64LPS12832EC-250TQLA3 4609-535-IS64LPS12832EC-250TQLA3 Integrated Silicon Solution Inc
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![]() | Mfr. Part #IS24C01-3STwicea Part #4609-535-IS24C01-3S | Integrated Silicon Solution Inc |
Description: EEPROM, 128X8, Serial, CMOS, PDSO8, MSOP-8
Datasheet
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| Min.:1 Mult.:1 | YES | 8 | - | 0.4 MHz | INTEGRATED SILICON SOLUTION INC | - | 128 words | 128 | 70 °C | - | PLASTIC/EPOXY | TSSOP | MSOP-8 | TSSOP8,.19 | SQUARE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | MSOP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 0.65 mm | unknown | - | 8 | S-PDSO-G8 | Not Qualified | 5.5 V | COMMERCIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 128X8 | - | 1.1 mm | 8 | 0.000004 A | 1024 bit | - | SERIAL | - | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE | - | - | 1010DDDR | - | - | - | - | 3 mm | 3 mm | ||
| IS24C01-3S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS42S16800A-10TITwicea Part #4609-535-IS42S16800A-10TI | Integrated Silicon Solution Inc |
Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, PLASTIC, TSOP2-54
Datasheet
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| Min.:1 Mult.:1 | YES | 54 | 7 ns | - | INTEGRATED SILICON SOLUTION INC | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | - | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | compliant | - | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | 1 | SYNCHRONOUS | - | 8MX16 | - | 1.2 mm | 16 | - | 134217728 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
| IS42S16800A-10TI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS41C16256C-35KITwicea Part #4609-535-IS41C16256C-35KI | Integrated Silicon Solution Inc |
EDO DRAM, 256KX16, 35ns, CMOS, PDSO40, 0.400 INCH, SOJ-40
Datasheet
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| Min.:1 Mult.:1 | YES | 40 | 35 ns | - | INTEGRATED SILICON SOLUTION INC | - | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | 0.400 INCH, SOJ-40 | - | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | - | - | EAR99 | - | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | - | 1 | 1.27 mm | compliant | - | 40 | R-PDSO-J40 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | 1 | ASYNCHRONOUS | - | 256KX16 | - | 3.76 mm | 16 | - | 4194304 bit | - | - | - | EDO DRAM | - | - | - | - | - | - | - | - | - | - | FAST PAGE WITH EDO | - | 26.1 mm | 10.16 mm | ||
| IS41C16256C-35KI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS45VM16320E-75BLA2Twicea Part #4609-535-IS45VM16320E-75BLA2 | Integrated Silicon Solution Inc |
Description: Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, TFBGA-54
Datasheet
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| Min.:1 Mult.:1 | YES | 54 | 6 ns | - | INTEGRATED SILICON SOLUTION INC | - | 33554432 words | 32000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | Yes | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | - | S-PBGA-B54 | - | 3.6 V | INDUSTRIAL | 2.7 V | 1 | SYNCHRONOUS | - | 32MX16 | - | 1.2 mm | 16 | - | 536870912 bit | - | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | YES | 8 mm | 8 mm | ||
| IS45VM16320E-75BLA2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS61LF12832A-6.5TQITwicea Part #4609-535-IS61LF12832A-6.5TQI | Integrated Silicon Solution Inc |
Description: 128KX32 CACHE SRAM, 6.5ns, PQFP100, TQFP-100
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 100 | 6.5 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | LQFP | TQFP-100 | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | Obsolete | QFP | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | QUAD | GULL WING | - | 1 | 0.65 mm | compliant | - | 100 | R-PQFP-G100 | Not Qualified | 3.465 V | INDUSTRIAL | 3.135 V | - | SYNCHRONOUS | 0.18 mA | 128KX32 | 3-STATE | 1.6 mm | 32 | 0.035 A | 4194304 bit | - | PARALLEL | COMMON | CACHE SRAM | - | - | - | - | - | 3.14 V | - | - | - | - | - | - | 20 mm | 14 mm | ||
| IS61LF12832A-6.5TQI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS62WV2568DALL-55BLITwicea Part #4609-535-IS62WV2568DALL-55BLI | Integrated Silicon Solution Inc |
Standard SRAM, 256KX8, 55ns, CMOS, PBGA36, 6 X 8 MM, LEAD FREE, MO-207, MINI BGA-36
Datasheet
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| Min.:1 Mult.:1 | YES | 36 | 55 ns | - | INTEGRATED SILICON SOLUTION INC | - | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA36,6X8,30 | BGA36,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | Yes | 1.8 V | - | - | 3A991.B.2.A | - | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 0.75 mm | compliant | - | - | R-PBGA-B36 | Not Qualified | 1.98 V | INDUSTRIAL | 1.62 V | - | ASYNCHRONOUS | 0.015 mA | 256KX8 | 3-STATE | 1.2 mm | 8 | 0.00001 A | 2097152 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | 1 V | - | - | - | - | - | - | 8 mm | 6 mm | ||
| IS62WV2568DALL-55BLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS61LF12832A-6.5B3Twicea Part #4609-535-IS61LF12832A-6.5B3 | Integrated Silicon Solution Inc |
Cache SRAM, 128KX32, 6.5ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, BGA-165
Datasheet
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| Min.:1 Mult.:1 | YES | 165 | 6.5 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | - | 131072 words | 128000 | 70 °C | - | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | No | 3.3 V | e0 | No | 3A991.B.2.A | TIN LEAD | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 165 | R-PBGA-B165 | Not Qualified | 3.465 V | COMMERCIAL | 3.135 V | - | SYNCHRONOUS | 0.175 mA | 128KX32 | 3-STATE | 1.2 mm | 32 | 0.03 A | 4194304 bit | - | PARALLEL | COMMON | CACHE SRAM | - | - | - | - | - | 3.14 V | - | - | - | - | - | - | 15 mm | 13 mm | ||
| IS61LF12832A-6.5B3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS42R32160F-6BLTwicea Part #4609-535-IS42R32160F-6BL | Integrated Silicon Solution Inc |
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90
Datasheet
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| Min.:1 Mult.:1 | YES | 90 | 5.4 ns | 166 MHz | INTEGRATED SILICON SOLUTION INC | - | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA90,9X15,32 | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | Yes | 2.5 V | - | - | EAR99 | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | - | R-PBGA-B90 | Not Qualified | 3.6 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.245 mA | 16MX32 | 3-STATE | 1.2 mm | 32 | 0.004 A | 536870912 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | - | 8192 | - | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 13 mm | 8 mm | ||
| IS42R32160F-6BL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS43DR16640-3DBLITwicea Part #4609-535-IS43DR16640-3DBLI | Integrated Silicon Solution Inc |
Description: DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 13.65 MM, 1.20 MM HEIGHT, LEAD FREE, MO-207, FBGA-84
Datasheet
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| Min.:1 Mult.:1 | YES | 84 | 0.45 ns | 333 MHz | INTEGRATED SILICON SOLUTION INC | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | DSBGA | Yes | 1.8 V | e1 | Yes | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 84 | R-PBGA-B84 | Not Qualified | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.35 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.015 A | 1073741824 bit | - | - | COMMON | DDR2 DRAM | - | - | - | - | - | - | 8192 | - | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 13.65 mm | 8 mm | ||
| IS43DR16640-3DBLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS64LF12832EC-6.5B3LA3Twicea Part #4609-535-IS64LF12832EC-6.5B3LA3 | Integrated Silicon Solution Inc |
Description: Cache SRAM, 128KX32, 6.5ns, CMOS, PBGA165, TFBGA-165
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 165 | 6.5 ns | 133 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | TBGA | TBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Active | BGA | Yes | 3.3 V | e1 | - | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | - | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 10 | 165 | R-PBGA-B165 | Not Qualified | 3.465 V | AUTOMOTIVE | 3.135 V | - | SYNCHRONOUS | 0.2 mA | 128KX32 | 3-STATE | 1.2 mm | 32 | 0.1 A | 4194304 bit | AEC-Q100 | PARALLEL | COMMON | CACHE SRAM | - | - | - | - | - | 3.14 V | - | - | - | - | - | - | 15 mm | 13 mm | ||
| IS64LF12832EC-6.5B3LA3 4609-535-IS64LF12832EC-6.5B3LA3 Integrated Silicon Solution Inc
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![]() | Mfr. Part #IS42VS32200E-10TLITwicea Part #4609-535-IS42VS32200E-10TLI | Integrated Silicon Solution Inc |
Synchronous DRAM, 2MX32, 8ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86
Datasheet
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| Min.:1 Mult.:1 | YES | 86 | 8 ns | 100 MHz | INTEGRATED SILICON SOLUTION INC | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP, TSSOP86,.46,20 | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | Obsolete | TSOP2 | Yes | 1.8 V | e3 | Yes | EAR99 | MATTE TIN | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | 260 | 1 | 0.5 mm | compliant | 10 | 86 | R-PDSO-G86 | Not Qualified | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.09 mA | 2MX32 | 3-STATE | 1.2 mm | 32 | 0.001 A | 67108864 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | - | 4096 | - | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | 22.22 mm | 10.16 mm | ||
| IS42VS32200E-10TLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS49NLC18160-25EBITwicea Part #4609-535-IS49NLC18160-25EBI | Integrated Silicon Solution Inc |
DDR DRAM, 16MX18, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144
Datasheet
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| Min.:1 Mult.:1 | YES | 144 | 2.5 ns | 400 MHz | INTEGRATED SILICON SOLUTION INC | - | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | 11 X 18.50 MM, FBGA-144 | BGA144,12X18,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | Obsolete | BGA | No | 1.8 V | - | - | EAR99 | - | AUTO REFRESH | 8542.32.00.28 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | 144 | R-PBGA-B144 | Not Qualified | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.98 mA | 16MX18 | 3-STATE | 1.2 mm | 18 | - | 301989888 bit | - | - | COMMON | DDR DRAM | - | - | - | - | - | - | - | - | 2,4,8 | - | MULTI BANK PAGE BURST | - | 18.5 mm | 11 mm | ||
| IS49NLC18160-25EBI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IS66WVC2M16ALL-7008BLITwicea Part #4609-535-IS66WVC2M16ALL-7008BLI | Integrated Silicon Solution Inc |
Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, MO-207, VFBGA-54
Datasheet
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| Min.:1 Mult.:1 | YES | 54 | 70 ns | - | INTEGRATED SILICON SOLUTION INC | - | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | VFBGA, BGA54,6X9,30 | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Obsolete | DSBGA | Yes | 1.8 V | e1 | Yes | 3A991.B.2.A | TIN SILVER COPPER | IT ALSO OPERATES SYNCHRONOUS BURST MODE | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 0.75 mm | compliant | - | 54 | R-PBGA-B54 | Not Qualified | 1.95 V | INDUSTRIAL | 1.7 V | - | ASYNCHRONOUS | 0.03 mA | 2MX16 | 3-STATE | 1 mm | 16 | 0.00015 A | 33554432 bit | - | PARALLEL | COMMON | PSEUDO STATIC RAM | - | - | - | - | - | - | - | - | - | - | - | - | 8 mm | 6 mm | ||
| IS66WVC2M16ALL-7008BLI 4609-535-IS66WVC2M16ALL-7008BLI Integrated Silicon Solution Inc
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![]() | Mfr. Part #IS46TR81280A-125JBLA2Twicea Part #4609-535-IS46TR81280A-125JBLA2 | Integrated Silicon Solution Inc |
Description: DDR DRAM, 128MX8, 12.5ns, CMOS, PBGA78, 8 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, FBGA-78
Datasheet
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| Min.:1 Mult.:1 | YES | 78 | 12.5 ns | 800 MHz | INTEGRATED SILICON SOLUTION INC | - | 134217728 words | 128000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | Yes | 1.5 V | - | - | EAR99 | - | AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY | 8542.32.00.32 | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | 78 | R-PBGA-B78 | Not Qualified | 1.575 V | INDUSTRIAL | 1.425 V | 1 | SYNCHRONOUS | 0.227 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | - | 1073741824 bit | AEC-Q100 | - | COMMON | DDR3 DRAM | - | - | - | - | - | - | 8192 | - | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | 10.5 mm | 8 mm | ||
| IS46TR81280A-125JBLA2 4609-535-IS46TR81280A-125JBLA2 Integrated Silicon Solution Inc
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![]() | Mfr. Part #IS64NVP12836EC-200B2LA3Twicea Part #4609-535-IS64NVP12836EC-200B2LA3 | Integrated Silicon Solution Inc |
ZBT SRAM, 128KX36, 3.1ns, CMOS, PBGA119, BGA-119
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| Min.:1 Mult.:1 | YES | 119 | 3.1 ns | 200 MHz | INTEGRATED SILICON SOLUTION INC | 3 | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | BGA | BGA, BGA119,7X17,50 | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | Active | BGA | Yes | 2.5 V | e1 | - | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | - | 8542.32.00.41 | BOTTOM | BALL | 260 | 1 | 1.27 mm | compliant | 10 | 119 | R-PBGA-B119 | Not Qualified | 2.625 V | AUTOMOTIVE | 2.375 V | - | SYNCHRONOUS | 0.235 mA | 128KX36 | 3-STATE | 3.5 mm | 36 | 0.1 A | 4718592 bit | AEC-Q100 | PARALLEL | COMMON | ZBT SRAM | - | - | - | - | - | 2.37 V | - | - | - | - | - | - | 22 mm | 14 mm | ||
| IS64NVP12836EC-200B2LA3 4609-535-IS64NVP12836EC-200B2LA3 Integrated Silicon Solution Inc
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![]() | Mfr. Part #IS64NLF51236B-7.5TQLA3Twicea Part #4609-535-IS64NLF51236B-7.5TQLA3 | Integrated Silicon Solution Inc |
Standard SRAM, 512KX36, 7.5ns, CMOS, PQFP100, QFP-100
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| Min.:1 Mult.:1 | YES | 100 | 7.5 ns | - | INTEGRATED SILICON SOLUTION INC | - | 524288 words | 512000 | 125 °C | -40 °C | PLASTIC/EPOXY | LQFP | LQFP, | - | RECTANGULAR | FLATPACK, LOW PROFILE | Active | - | - | 3.3 V | e3 | - | 3A991.B.2.A | Tin (Sn) | - | 8542.32.00.41 | QUAD | GULL WING | 260 | 1 | 0.65 mm | unknown | 30 | - | R-PQFP-G100 | - | 3.465 V | AUTOMOTIVE | 3.135 V | - | SYNCHRONOUS | - | 512KX36 | - | 1.6 mm | 36 | - | 18874368 bit | - | PARALLEL | - | STANDARD SRAM | - | - | - | - | - | - | - | - | - | - | - | - | 20 mm | 14 mm | ||
| IS64NLF51236B-7.5TQLA3 4609-535-IS64NLF51236B-7.5TQLA3 Integrated Silicon Solution Inc
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![]() | Mfr. Part #IS61QDP2B41M18A-300M3ITwicea Part #4609-535-IS61QDP2B41M18A-300M3I | Integrated Silicon Solution Inc |
QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165
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| Min.:1 Mult.:1 | YES | 165 | 0.45 ns | 300 MHz | INTEGRATED SILICON SOLUTION INC | - | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LBGA | LBGA, BGA165,11X15,40 | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | Active | - | No | 1.8 V | - | - | 3A991.B.2.A | - | - | 8542.32.00.41 | BOTTOM | BALL | - | 1 | 1 mm | compliant | - | - | R-PBGA-B165 | Not Qualified | 1.89 V | INDUSTRIAL | 1.71 V | - | SYNCHRONOUS | 0.95 mA | 1MX18 | 3-STATE | 1.4 mm | 18 | 0.32 A | 18874368 bit | - | PARALLEL | SEPARATE | QDR SRAM | - | - | - | - | - | 1.7 V | - | - | - | - | - | - | 17 mm | 15 mm | ||
| IS61QDP2B41M18A-300M3I 4609-535-IS61QDP2B41M18A-300M3I Integrated Silicon Solution Inc
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