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LSIC1MO120E0160 Tech Specifications

Hamlin  LSIC1MO120E0160 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case TO-247-3
Mounting Type Through Hole
Supplier Device Package TO-247-3
RoHS Non-Compliant
Power Dissipation (Max) 125W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Other Names F11005
Current - Continuous Drain (Id) @ 25℃ 22A (Tc)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Packaging Tube
Series -
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Cable Length 228.6 mm
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200 mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 4V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 800V
Gate Charge (Qg) (Max) @ Vgs 57nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Vgs (Max) +22V, -6V
FET Feature -
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