EPS8 Tech Specifications

Microchip  EPS8 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Through Hole
Package / Case A, Axial
Surface Mount NO
Supplier Device Package A, Axial
Diode Element Material SILICON
Number of Terminals 2Terminals
RoHS Yes
Package Bulk
Mfr Microchip Technology
Product Status Active
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Package Style LONG FORM
Package Body Material GLASS
Operating Temperature-Min -65 °C
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 175 °C
Rohs Code No
Manufacturer Part Number EPS8
Power Dissipation (Max) 2.5 W
Package Shape ROUND
Manufacturer Microsemi Corporation
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Breakdown Voltage-Nom 8.8 V
Risk Rank 5.58
Operating Temperature -65°C ~ 175°C (TJ)
Series -
ECCN Code EAR99
Type Zener
Applications General Purpose
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.50
Subcategory Transient Suppressors
Technology AVALANCHE
Terminal Position AXIAL
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
JESD-30 Code O-LALF-W2
Qualification Status Not Qualified
Polarity BIDIRECTIONAL
Configuration SINGLE
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Case Connection ISOLATED
Power Line Protection No
Voltage - Breakdown (Min) 9V
Power - Peak Pulse 1000W (1kW)
Current - Peak Pulse (10/1000μs) 62.1A (8/20µs)
Voltage - Clamping (Max) @ Ipp 13.7V
Voltage - Reverse Standoff (Typ) 8V
Bidirectional Channels 1
Rep Pk Reverse Voltage-Max 8 V
Capacitance @ Frequency -
Non-rep Peak Rev Power Dis-Max 1000 W
Reverse Current-Max 2 µA
Breakdown Voltage-Min 9 V
Clamping Voltage-Max 13.7 V
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